As an official authorized distributor, we offer CRMICRO's advanced wide bandgap semiconductor devices. Our selection includes Silicon Carbide (SiC) diodes and MOSFETs, and Gallium Nitride (GaN) HEMTs. These devices enable high-efficiency, high-frequency power conversion solutions for demanding applications.
Zero recovery loss diodes with temperature-stable characteristics for high-efficiency rectification.
High-voltage MOSFETs with superior switching performance compared to silicon alternatives.
Enhancement-mode GaN transistors for ultra-high frequency power conversion.
High-efficiency CRMICRO SiC and GaN devices for next-generation fast charging applications.
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Learn MoreHow to choose the right CRMICRO SiC or GaN device for your application - voltage, frequency, and performance requirements.
Technical documents on WBG design considerations, gate driving, and thermal management.
Common questions about CRMICRO wide bandgap semiconductors and answers from our technical experts.
For a complete list of available models and specifications, contact our technical support.
| Part No. | Technology | Package | Voltage (V) | Current (A) | Key Parameters | Applications |
|---|---|---|---|---|---|---|
| CRSCD06506 | SiC Diode | TO-247 | 650 | 6 | Zero recovery, 6A | Boost PFC |
| CRSCM000080K | SiC MOSFET | TO-247 | 1200 | 30 | 80mΩ, 30A | Industrial Inverters |
| CRGND060028 | GaN HEMT | PDFN | 600 | 28 | 280mΩ, e-mode | Fast Charging |
Our expert FAEs are ready to help with your SiC/GaN selection and design-in process
Contact Our FAE Team
Technical Note from our FAE
CRMICRO's wide bandgap devices offer significant advantages over silicon alternatives, particularly in high-frequency applications. SiC MOSFETs excel in high-voltage applications (650V+) with their superior switching performance and high-temperature operation capabilities. GaN HEMTs are ideal for ultra-high frequency applications where their fast switching and zero reverse recovery characteristics provide maximum efficiency gains.